 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUM75N06-09L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) () 0.0093 at VGS = 10 V 0.0135 at VGS = 4.5 V ID (A) 90 62 FEATURES * TrenchFET(R) Power MOSFET * 175 C Junction Temperature Available RoHS* COMPLIANT D TO-263 G DRAIN connected to TAB G DS S N-Channel MOSFET Top View Ordering Information: SUM75N06-09L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 100 C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 60 20 90 53 160 50 125 125 b Unit V A mJ W C 3.75c - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72037 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 (PCB Mount)c Symbol RthJA RthJC Limit 40 1.2 Unit C/W SUM75N06-09L Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 125 C VDS = 60 V, VGS = 0 V, TJ = 175 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125 C Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 175 C VGS = 4.5 V, ID = 30 A VGS = 4.5 V, ID = 30 A, TJ = 125 C VGS = 4.5 V, ID = 30 A, TJ = 175 C Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Rise Timec c Symbol Test Conditions Min. 60 1 Typ. Max. Unit 2 3 100 1 50 150 V nA A A 75 0.0075 0.0093 0.0163 0.024 0.0105 0.0135 0.0224 0.030 25 75 2400 gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, ID = 30 A S VGS = 0 V, VDS = 25 V, f = 1 MHz 430 210 47 75 pF VDS = 30 V, VGS = 10 V, ID = 90 A 12 13 7 12 50 40 20 90 160 180 1.4 40 80 4 0.16 2 0.040 nC Turn-On Delay Timec Turn-Off Delay Timec Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge VDD = 30 V, RL = 0.4 ID 90 A, VGEN = 10 V, RG = 2.5 Cb 30 25 12 ns Source-Drain Diode Ratings and Characteristics TC = 25 IS ISM VSD trr IRM(REC) Qrr A V ns A C IF = 90 A, VGS = 0 V IF = 50 A, di/dt = 100 A/s Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72037 S-80274-Rev. B, 11-Feb-08 SUM75N06-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 160 VGS = 10 thru 5 V I D - Drain Current (A) 120 I D - Drain Current (A) 120 160 80 4V 80 40 3V 0 0 2 4 6 8 10 40 TC = 125 C 25 C - 55 C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 120 TC = - 55 C 100 g fs - Transconductance (S) 25 C 80 125 C 60 r DS(on) - On-Resistance () 0.017 0.020 Transfer Characteristics 0.014 0.011 VGS = 4.5 V 40 VGS = 10 V 0.008 20 0 0 10 20 30 40 50 60 0.005 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance 4000 20 On-Resistance vs. Drain Current 3200 C - Capacitance (pF) Ciss 2400 VGS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 75 A 12 1600 8 800 Coss Crss 0 10 20 30 40 50 60 4 0 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72037 S-80274-Rev. B, 11-Feb-08 www.vishay.com 3 SUM75N06-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.5 VGS = 10 V ID = 30 A 2.0 r DS(on) - On-Resistance I S - Source Current (A) 100 (Normalized) 1.5 TJ = 150 C 10 TJ = 25 C 1.0 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 80 76 100 IAV (A) at TA = 25 C V(BR)DSS (V) I Dav (A) 72 ID = 10 mA 10 68 1 IAV (A) at TA = 150 C 0.1 0.00001 0.0001 0.001 tin (s) 0.01 0.1 1 64 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 72037 S-80274-Rev. B, 11-Feb-08 SUM75N06-09L Vishay Siliconix THERMAL RATINGS 90 1000 Limited by rDS(on)* 100 I D - Drain Current (A) 60 I D - Drain Current (A) 10 s 100 s 10 1 ms 10 ms DC, 100 ms TC = 25 C Single Pulse 75 45 30 1 15 0 0 25 50 75 100 125 150 175 0.1 0.1 * VGS 1 10 100 TC - Case Temperature (C) Maximum Avalanche Drain Current vs. Case Temperature VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72037. Document Number: 72037 S-80274-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of SUM75N06-09L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |